Please continue to follow the general
advice on reading assignments from the
first week's assignment.
Reading assignment:
The class voted to spend this week covering advanced nano-scale electronic
devices such as quantum dots and single-electron transistors. By
far the best survey article I know of on this area so far is the MITRE
research organization's report on nanoelectronic devices, below.
This article has numerous references to lots of other articles you can
obtain to get more depth. The only problem is that it only relates
developments through 1997.
Slightly more recent and much shorter:
This article is more recent and more specific, focused on a particular
device-technique called the "quantum dot cellular automaton." (I
have some doubts about this whole approach.)
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G. L. Snider et al., "Quantum-dot cellular automata: Review and recent
experiments", Journal of Applied Physics 85(8):4283-4285, Apr. 1999.
Accessible on the web at this
link, but you must access it from a .ufl.edu machine.
Older but more detailed:
See more papers by these authors at:
Here's yet another idea for a device based on single-electron tunneling
between islands. The authors analyze its dissipation and show that
it can be less than kT (this is possible because the device is reversible).
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K. K. Likharev and A. N. Korotkov, "Single-electron parametron: Reversible
Computation in a Discrete-State System," Science 273:763-765, 9 Aug. 1996.
I'll put it on reserve.
Here are some other relevant articles I have, some of which I might put
online. Or, I might find some newer ones.
Mark A. Reed, "Quantum Dots," Scientific American, Jan. 1993,
pp. 118-123. Will be on reserve
Bandyopadhyay et al., "Supercomputing with spin-polarized single electrons
in a quantum coupled architecture," Nanotechnology 5(2):113-133,
Apr. 1994. Will be on reserve.
If we have time, we will also cover the following area (the class's 2nd
choice), but I haven't had time to gather many readings for this one yet.
Advanced Semiconductor Device Structures
SOI, double-gate FETs, quantum dots and related structures.
Xuejue Huang et al, "Sub 50-nm FinFET: PMOS", International Electron Devices
Meeting 1999, PDF@http://www-inst.EECS.Berkeley.EDU/~xuejue/iedm-paper-new.pdf.
The class voted against pursuing the following areas in class, but you
can delve into them yourself if you're interested.
More on Scaling Limits of Semiconductor Technology
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Read any of the articles from last
week's assignment that you didn't have time to get around to yet.
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Bijan Davari et al., "CMOS Scaling for High Performance and Low Power---The
Next Ten Years," Proceedings of the IEEE, 83(4):595-605, 1995. Now available on reserve.
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Dennis Sylvester and Kurt Keutzer, "Rethinking Deep-Submicron Circuit
Design," IEEE Computer, Nov. 1999. Now available on reserve.
Advanced Cooling Systems for Use With Semiconductor Technology
Use of liquid coolant, thermoelectrics, heat pipes... Need more
articles....
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David B. Tuckerman and R. F. W. Pease, "High-Performance Heat Sinking for
VLSI," IEEE Electron Device Letters, EDL-2(5):126-129, May 1981.
Now available on reserve.
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David B. Tuckerman, Heat-Transfer Microstructures for Integrated
Circuits, PhD thesis, Stanford University, Feb. 1984. If you're
interested, come by my office & we'll make you a copy.
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Richard D. Danielson, "Cooling a Superfast Computer," July 1986.
Will be on reserve.
Written assignment #4: (due Fri. 2/11)
This is our standing written assignment. It should be on the subject
of the above lectures and reading material, and it's due Friday, Feb. 11.