CIS 6930.3753X Spr.'02
Readings for Part III:
The Future of Semiconductor Technology
Continue following the general advice
on reading assignments from the first readings page.
Index to the below:
Lecture 11: The basics of semiconductor
technology:
This lecture will be an overview of the basic concepts, structures, and
processes of semiconductor technology, for the benefit of those students
who may not already be familiar with it.
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Lecture slides: PhysLimL11.ppt
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Homework: Lec10-14-hw.html.
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Textbook readings:
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Y2k lecture 6 notes, blue book, pp. 51-52.
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Feynman lectures on computation, Sections 7.1, "The Physics of Semiconductor
Devices", and 7.3, "VLSI Circuit Construction"
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Green book, Section 7.1.1, "Basic iCMOS review".
Very briefly describes ordinary CMOS logic circuits and reviews the contributions
to their energy dissipation.
This is a more detailed technical discussion of the physics of semiconductor
MOSFET transistors.
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Robert F. Pierret, Semiconductor
Device Fundamentals, Addison-Wesley, 1996. This book is on
reserve
at Marston. Really!
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Chapter 1, "Semiconductors: A General Introduction"
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Section 2.2, "Semiconductor Models"
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Chapter 5, "pn Junction Electrostatics"
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Chapter 16, "MOS Fundamentals"
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Chapter 17, "MOSFETs--The Essentials"
If you find you need more background reading on this subject than the above,
let me know and I can try to refer you to library books and other resources.
Also, if you already know this subject area and can recommend a good short
introductory article to distribute to the class, I would appreciate a suggestion.
Lecture 12: Semiconductor technology
trends, scaling laws, & roadmap.
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Lecture slides: PhysLimL12.ppt
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Homework: Lec10-14-hw.html.
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Textbook readings:
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Y2k lecture 7 notes, blue book pp. 53-58.
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Green book, Section 7.1, "Maximizing the efficiency of
iCMOS."
This is my own analysis, based on the semiconductor industry's roadmap,
of the minimum energy dissipation per operation of CMOS circuits.
This is the primary factor determining how many raw computational operations
can be performed per second per unit surface area available for cooling;
that is, how much computational power can you cram into a box of a given
size. You might also look at section 7.9 of the m.s. - "Scaling SCRL
to future technology generations." You don't know what SCRL is yet,
so ignore the sentences about it and just focus on the ones about (ordinary)
irreversible CMOS.
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Feynman
and Computation, chapter 9, Carver A. Mead, "Scaling of MOS technology
to submicrometer feature sizes." Also in the private readings
directory.
This next article by Meindl is an excellent survey of the constraints that
come into play at many levels - from low-level physics to systems issues
- that may impact further scaling of semiconductor technology over the
next few decades.
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James D. Meindl, "Low Power Microelectronics: Retrospect and Proposect,"
Proceedings
of the IEEE, 83(4):619-635, Apr. 1995. In readings.
You can also get it thru IEEE's website from UF.
See first-hand for yourself what the international semiconductor industry
is planning to accomplish over the next 14 years:
Other misc. references:
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B. Hoeneisen and C. A. Mead, "Fundamental Limitations in Microelectronics-I.
MOS Technology," Solid State Electronics 15:819-829, 1972.
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Robert W. Keyes, "The Future of the Transistor," Scientific American,
June 1993, pp. 70-78.
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Gary Stix, "Toward ``Point One''," Scientific American, Feb. 1995,
pp. 90-95. readings/Stix95.pdf.
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Bijan Davari et al., "CMOS Scaling for High Performance and Low
Power-The Next Ten Years," Proceedings of the IEEE, 83(4):595-605,
April 1995. readings/Davari+95.pdf
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Dennis Sylvester and Kurt Keutzer, "Rethinking Deep-Submicron Circuit Design,"
IEEE
Spectrum(?), Nov. 1999, 25-33.
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A. Bhavnagarwala et al., "A Minimum Total Power Methodology for
Projecting Limits on CMOS GSI," IEEE Transactions on Very Large Scale
Integration (VLSI) Systems, 8(3):235-251, June 2000. Should
be accessible through IEEE's site from UF.
Lecture 13: Fundamental &
engineering limits to semiconductor scaling.
The remaining readings are the same as for lecture 12.
Lecture 14: Limits to energy efficiency
of irreversible electronics.
The remaining readings are the same as for lecture 12.
Extra material: Future semiconductor
structures.
Advanced Semiconductor Device Structures
SOI, double-gate FETs, quantum dots and related structures.
Xuejue Huang et al, "Sub 50-nm FinFET: PMOS", International Electron Devices
Meeting 1999, PDF@http://www-inst.EECS.Berkeley.EDU/~xuejue/iedm-paper-new.pdf.Advanced
Cooling Systems for Use With Semiconductor Technology
Use of liquid coolant, thermoelectrics, heat pipes... Need more articles....
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David B. Tuckerman and R. F. W. Pease, "High-Performance Heat Sinking for
VLSI," IEEE Electron Device Letters, EDL-2(5):126-129, May 1981.
Now available on reserve.
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David B. Tuckerman, Heat-Transfer Microstructures for Integrated Circuits,
PhD thesis, Stanford University, Feb. 1984. If you're interested,
come by my office & we'll make you a copy.
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Richard D. Danielson, "Cooling a Superfast Computer," July 1986.
Will be on reserve.